Abstract: Atomic layer deposition (ALD) is a versatile deposition technique that allows for precise thickness control of the deposited films, which can be used for a variety of applications from improving existing CMOS technology to passivating novel surfaces to fabrication of spintronic devices.

XPS and LEED demonstrated that multilayer, epitaxially aligned h-BN was deposited by using BCl3/NH3 ALD cycles at 600 K on RuO2(110)/Ru(0001) and on atomically clean Ni(111). The BN(0001)/RuO2(110) interface had negligible charge transfer or band bending as indicated by XPS, and LEED data indicated a 30-deg rotation between the coincident BN and oxide lattices.

Multilayer h-BN(0001) was epitaxially deposited on Ni(111) by ALD, and graphene was directly deposited by chemical vapor deposition (CVD) on the h-BN(0001)/Ni(111) heterostructure. Direct multilayer, in situ growth of h-BN on magnetic substrates such as nickel is important for spintronic device applications. ALD of multilayer B₂O₃ was accomplished by using BCl₃/H₂O at room temperature on Si(100) for ultrashallow doping applications. BN was subsequently deposited as a passivation barrier on B₂O₃. BN deposited by ALD has been proposed as a novel passivation barrier on lithium garnet type solid-state electrolytes to inhibit carbonate formation.

Upon removal of the lithium carbonate overlayer trends in core level spectra demonstrated that binding energy calibration of the Li 1s at 56.4 eV, yields a more consistent interpretation of results than the more commonly used standard of the adventitious C 1s at 284.8 eV.