Argonne National Laboratory

Research Highlight | Materials Science

High mobility and nonsaturating giant magnetoresistance in the new 2D material NaCu4Se4
In a study published in the Journal of the American Chemical Society, researchers discovered the use of metal oxide chemical precursors can open reaction paths to new low-dimensional compounds.
calculated electronic band structure near the Fermi level for NaCu4Se4
Calculated electronic band structure near the Fermi level for NaCu4Se4 (on the right), with the Fermi surfaces (at the points in the high-symmetry path) shown on the left.

Scientific Achievement

Using a unique CuO in NaSex flux, we discovered the new 2D compound NaCu4Se4 that exhibits a high hole mobility of ~808 cm2V-1s-1 and a nonsaturating linear MR ~1400% at 9 T.

Significance and Impact

Because NaCu4Se4, does not have apparent Dirac points or the typical features of materials with nonsaturating MR, its very existence implies new mechanisms to these exotic effects and should contribute to a deeper understanding of how they can arise.

Research Details

  • The need of CuO is crucial to form NaCu4Se4.
  • X-ray photoelectron spectroscopy demonstrates the formula is (Na+)(Cu+)4(Se2-)(Se-)(Se2)2- with mixed valency on Se.
  • First-principles calculations suggest multiple electronic bands crossing the Fermi level and the density of states around it composed of Cu-d and Se-p orbitals.

DOI: 10.1021/jacs.8b11911

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