Argonne National Laboratory

Research Highlight | Materials Science

Optical charge control of defects in SiC
In a study published in Nature Communications, researchers develop a comprehensive model of the defects and optical processes involved, offering a strong basis to improve material design and to develop quantum applications in SiC.
Effect of near-bandgap illumination on 4H-SiC divacancies. PL spectrum with 976 nm excitation of the various divacancies in 4H-SiC, as designated in ref. 6, without and with continuous illumination at 405 nm (≈5 mW optical power). All the observed PL lines except PL5 and PL6 are enhanced by the UV excitation, including both c axis and basal defects.

Scientific Achievement

We demonstrate optical charge control and photoluminescence enhancement of defects in SiC.

Significance and Impact

Understanding the charge stability and charge conversion dynamics of common defects in SiC for quantum information processing and nanoscale sensing.

Research Details

  • Charge control of quantum defects provide enhanced spin-dependent readout and charge stability.
  • Photoluminescence (PL) from divacancy (VV) defects increases by up to three orders of magnitude using near-ultraviolet excitation.
  • Enhancement shows no degradation of the spin coherence time.
  • Charge conversion remains stable for hours at cryogenic temperatures.
  • Allows for spatial and persistent patterning of relative charge state populations for charge memory applications.

DOI: 10.1038/s41467-017-01993-4

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