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  • A catalyst includes a carrier body and a catalytic portion carried by the carrier body
    Intellectual Property Available to License
    US Patent 7,972,569
    • Catalysts and systems incorporating the catalyst (ANL-IN-07-036)

    The catalytic portion includes a plurality of distinct layers of catalytic material, which layers may be deposited through atomic layer deposition techniques. The catalyst may have a selectivity for the conversion of alkanes to alkenes of over 50%. The catalyst may be incorporated in a reactor such as a fluidized bed reactor or a single pass reactor.

     

  • Compositions and methods of preparing a bimetallic alloy having enhanced electrocatalytic properties are provided
    Intellectual Property Available to License
    US Patent 9,246,177
    • Bimetallic alloyelectrocatalysts with multilayered platinum-skin surfaces (ANL-IN-10-109)

    The composition comprises a PtNi substrate having a surface layer, a near-surface layer, and an inner layer, where the surface layer comprises a nickel-depleted composition, such that the surface layer comprises a platinum skin having at least one atomic layer of platinum.

     

  • A method to fabricate nanoporous diamond membranes and a nanoporous diamond membrane are provided.
    Intellectual Property Available to License
    US Patent 8,673,164
    • Simple Method to Fabricate Nano-Porous Diamond Membranes (ANL-IN-11-001)

    A silicon substrate is provided and an optical lithography is used to produce metal dots on the silicon substrate with a predefined spacing between the dots. Selective seeding of the silicon wafer with nanodiamond solution in water is performed followed by controlled lateral diamond film growth producing the nanoporous diamond membrane. Back etching of the under laying silicon is performed to open nanopores in the produced nanoporous diamond membrane.

    Benefits

    • Biocompatible for skin grafting, as well as for water purification applications 
  • An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation.
    Intellectual Property Available to License
    US Patent 8,354,290
    • Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches (ANL-IN-09-070)

    Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.

    Benefits

    • A specialized radio frequency (RF) micro-electromechanical system (MEMS) switch that promises enhanced capabilities for next-generation military and commercial communication systems 
    • Robust and reliable with extremely low power consumption; prevents overcharge and improves safety 
    • CMOS compatible 

     

  • An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation.
    Intellectual Property Available to License
    US Patent 9,269,519
    • UNCD Films with optimized dielectric properties for advanced RF MEMS capacitive switches (ANL-IN-09-070C)

    Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.

    Benefits

    • A specialized radio frequency (RF) micro-electromechanical system (MEMS) switch that promises enhanced capabilities for next-generation military and commercial communication systems 
    • Robust and reliable with extremely low power consumption; prevents overcharge and improves safety 
    • CMOS compatible 

     

  • A reliable long life RF-MEMS capacitive switch
    Intellectual Property Available to License
    US Patent 8,525,185
    • RF MEMS Capacitive Switches With High Reliability (ANL-IN-09-053)

    A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a ​“fast discharge diamond dielectric layer” and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.

    Benefits

    • A specialized radio frequency (RF) micro-electromechanical system (MEMS) switch that promises enhanced capabilities for next-generation military and commercial communication systems 
    • Robust and reliable with extremely low power consumption; prevents overcharge and improves safety 
    • CMOS Compatible 

     

  • A system and method for forming graphene layers on a substrate
    Intellectual Property Available to License
    US Patent 8,906,772
    • Graphene Layer Formation at Low Substrate Temperature on a Metal and Carbon Based Substrate (ANL-IN-11-055)

    The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.

    Benefits

    • Direct growth of graphene on insulating substrate at wafer-scale 
    • Order of magnitude increase in breakdown current density reaching up to one thousand times improvement over conventional metal based interconnects
  • A system and method for forming graphene layers on a substrate
    Intellectual Property Available to License
    US Patent 9,875,894; US Patent Application 15/064330 
    • Graphene Layer Formation at Low Substrate Temperature on a Metal and Carbon Based Substrate (ANL-IN-11-055C)

    The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.

    Benefits

    • Direct growth of graphene on insulating substrate at wafer-scale 
    • Order of magnitude increase in breakdown current density reaching up to one thousand times improvement over conventional metal based interconnects 

     

  • A system and method for forming graphene layers on a substrate
    Intellectual Property Available to License
    US Patent 8,652,946
    • Graphene Layer Formation on a Carbon Based Substrate (ANL-IN-12-024)

    The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.

    Benefits

    • Direct growth of graphene on insulating substrate at wafer-scale 
    • Order of magnitude increase in breakdown current density reaching up to one thousand times improvement over conventional metal based interconnects