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Alan M Dibos

Assistant Scientist, Nanoscience/Center for Molecular Engineering (CME)

Biography

Education

PhD, Applied Physics, Harvard Univ. (2015)

BS, Physics, Univ. of Kansas, (2006)

Professional Experience

Assistant Scientist, Center for Nanoscale Materials, Argonne: 2019 – present

Assistant Scientist, Center for Molecular Engineering, Argonne: 2019 – present

Postdoctoral Scholar, Electrical Engineering, Princeton: 2016 – 2019

Postdoctoral Scholar, Chemistry, Harvard: 2015 – 2016

Research Assistant, Applied Physics, Harvard: 2006 –2015

Research Areas

Dr. Dibos is an expert in nanofabrication and cryogenic measurement of low-dimensional optical nanostructures. His research interests include optical coupling of photonic and plasmonic nanocavities to atom-like defect centers in solid-state hosts. The goal is to modify the spectral properties, increase photon emission rates, and improve the photon collection efficiency for quantum information science applications. To that end, Dr. Dibos works within two different divisions: (1) the Nanofabrication and Devices (NFD) group within Argonne’s Center for Nanoscale Materials (CNM) a DOE nanoscience user facility with a premier cleanroom, and (2) the Center for Molecular Engineering as a principal investigator (PI) on a Q-NEXT project investigating telecom quantum memories based upon solid-state spins at low temperatures. Dr. Dibos is also lead-PI on a LDRD project involving incorporation of on-chip superconducting nanowire single photon detectors (SNSPDs) to increase device functionality.

Recent Related Publications

  • A. Dibos, M. Solomon, S. Sullivan, M. Singh, K. Sautter, C. Horn, G. Grant, Y. Lin, J. Wen, F. J. Heremans, S. Guha, and D. Awschalom. Purcell Enhancement of Erbium Ions in TiO2 on Silicon Nanocavities.” Nano Lett. 16, 6530 (2022).
  • M. Singh, G. Wolfowicz, J. Wen, S. Sullivan, A. Prakash, A. Dibos, D. Awschalom, F. Heremans, and S. Guha Development of a Scalable Quantum Memory Platform -- Materials Science of Erbium-Doped TiO2 Thin Films on Silicon.” arXiv:2202.05376 (2022).
  • M. Raha, S. Chen, C. Phenicie, S. Ourari, A. Dibos, and J. Thompson, Optical quantum nondemolition measurement of a single rare earth ion qubit.” Nat. Commun. 11 1605 (2020).
  • A. Dibos, Y. Zhou, L. Jauregui, G. Scuri, D. Wild, A. High, T. Taniguchi, K. Watanabe, M. Lukin, P. Kim, and H. Park, Electrically Tunable Exciton−Plasmon Coupling in a WSe2 Monolayer Embedded in a Plasmonic Crystal Cavity.” Nano Lett. 19, 3543 (2019).
  • A. Dibos, M. Raha, C. Phenicie, and J. Thompson, Atomic Source of Single Photons in the Telecom Band.” Phys. Rev. Lett. 120, 243601 (2018). [Editors’ Suggestion]
  • M. Polking, A. Dibos, N. de Leon, and H. Park, Improving Defect-Based Quantum Emitters in SiC via Inorganic Passivation.” Adv. Materials 30, 1704543 (2018).
  • Y. Zhou, G. Scuri, D. Wild, A. High, A. Dibos, L. Jauregui, C. Shu, K. de Greve, K. Pistunova, A. Joe, T. Taniguchi, K. Watanabe, P. Kim, M. Lukin, and H. Park Probing dark excitons in atomically thin semiconductors via near-field coupling to surface plasmon polaritons.” Nature Nanotech. 12, 856 (2017).
  • A. High, R. Devlin, A. Dibos, M. Polking, D. Wild, J. Perczel, N. de Leon, M. Lukin, and H. Park, Visible-Frequency Hyperbolic Metasurface.” Nature 522, 192 (2015).