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Nanofabrication

Argonne maintains a wide-ranging science and technology portfolio that seeks to address complex challenges in interdisciplinary and innovative ways. Below is a list of all articles, highlights, profiles, projects, and organizations related specifically to nanofabrication.

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  • A method to fabricate nanoporous diamond membranes and a nanoporous diamond membrane are provided.
    Intellectual Property Available to License
    US Patent 8,673,164
    • Simple Method to Fabricate Nano-Porous Diamond Membranes (ANL-IN-11-001)

    A silicon substrate is provided and an optical lithography is used to produce metal dots on the silicon substrate with a predefined spacing between the dots. Selective seeding of the silicon wafer with nanodiamond solution in water is performed followed by controlled lateral diamond film growth producing the nanoporous diamond membrane. Back etching of the under laying silicon is performed to open nanopores in the produced nanoporous diamond membrane.

    Benefits

    • Biocompatible for skin grafting, as well as for water purification applications 
  • A system and method for forming graphene layers on a substrate
    Intellectual Property Available to License
    US Patent 8,906,772
    • Graphene Layer Formation at Low Substrate Temperature on a Metal and Carbon Based Substrate (ANL-IN-11-055)

    The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.

    Benefits

    • Direct growth of graphene on insulating substrate at wafer-scale 
    • Order of magnitude increase in breakdown current density reaching up to one thousand times improvement over conventional metal based interconnects
  • A system and method for forming graphene layers on a substrate
    Intellectual Property Available to License
    US Patent 9,875,894; US Patent Application 15/064330 
    • Graphene Layer Formation at Low Substrate Temperature on a Metal and Carbon Based Substrate (ANL-IN-11-055C)

    The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.

    Benefits

    • Direct growth of graphene on insulating substrate at wafer-scale 
    • Order of magnitude increase in breakdown current density reaching up to one thousand times improvement over conventional metal based interconnects 

     

  • A system and method for forming graphene layers on a substrate
    Intellectual Property Available to License
    US Patent 8,652,946
    • Graphene Layer Formation on a Carbon Based Substrate (ANL-IN-12-024)

    The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.

    Benefits

    • Direct growth of graphene on insulating substrate at wafer-scale 
    • Order of magnitude increase in breakdown current density reaching up to one thousand times improvement over conventional metal based interconnects 
  • A system and method for forming graphene layers on a substrate
    Intellectual Property Available to License
    US Patent 9,202,684
    • Graphene Layer Formation on a Carbon Based Substrate (ANL-IN-11-055B)

    The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.

    Benefits

    • Direct growth of graphene on insulating substrate at wafer-scale 
    • Order of magnitude increase in breakdown current density reaching up to one thousand times improvement over conventional metal based interconnects
  • A method for coating a dielectric substrate with a R-GO film includes positioning the dielectric substrate in a chamber which is purged with a first gas to adjust a pressure of the chamber to a first pressure
    Intellectual Property Available to License
    US Patent 10,351,429 B2
    • Direct Synthesis of Reduced Graphene Oxide Films on Dielectric Substrates (ANL-IN-14-110)

    A second gas at a second flow rate and a third gas at a third flow rate is inserted into the chamber to increase the chamber pressure to a second pressure greater than the first pressure. A chamber temperature is increased to a first temperature. The flow of the second gas and the third gas is stopped. The chamber is purged to a third pressure higher than the first pressure and lower than the second pressure. The pressure of the chamber is set at a fourth pressure greater than the first pressure and the third pressure. A fourth gas is inserted into the chamber at a fourth flow rate for a first time.

    Benefits

    • Optically transparent, CVD deposition of reduced graphene oxide film directly on the glass substrate 
    • Wafer-scale synthesis in few mins 
    • Pin-hole free deposition 
    • Moderate sheet resistance at lower thickness 
    • High thermal conductivity than Tin Oxide 
  • A method for coating a substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases
    Intellectual Property Available to License
    US Patent 9,741,561 B2
    • Method To Deposit Optically Transparent And Scratch Resistant Nanocrystalline Diamond Glass At Low Temperatures (ANL-IN-14-006)

    Transparent coatings find numerous applications in modern devices. For example, transparent coatings can be used for coating windshields, air craft windows, cell phone screens, tablet screens, computer screens, weapon heads, field deployed sensors, lasers, light emitting diodes (LEDs), etc. These coatings need to be transparent, scratch resistant, have high hardness, corrosion resistance, and generally provide protection from the environment.

    There is also an increasing demand for transparent semi-conductor devices. For example, traditional solar cells are fabricated on silicon which is opaque. Only one surface of such solar cells is available for receiving light and generating electricity therefrom. There is also a demand for other semi-conductor devices such as p-n junction devices, LEDs, other diodes, transistors, etc. Moreover, high power high temperature semi-conductor devices produce a substantial amount of heat which needs to be dissipated for proper operation of the semi-conductor devices. 

    The patents’ details generally discuss methods for fabricating transparent films and devices; and in particular methods for fabricating transparent nanocrystalline diamond (NCD) coatings, and transparent NCD devices.

    Benefits

    • Optically transparent, scratch resistant ultrathin film of diamond on glass for protective applications

    Description

    A method for coating a substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The plasma ball has a diameter. The plasma ball is disposed at a first distance from the substrate and the substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the substrate, and a diamond coating is deposited on the substrate. The diamond coating has a thickness. Furthermore, the diamond coating has an optical transparency of greater than about 80%. The diamond coating can include nanocrystalline diamond. The microwave plasma source can have a frequency of about 915 MHz.

  • A source cold cathode field emission array (FEA) source based on ultra-nanocrystalline diamond (UNCD) field emitters
    Intellectual Property Available to License
    US Patent 9,299,526
    • Method to Fabricate Portable Electron Source Based on Nitrogen Incorporated Ultrananocrystalline Diamond (N-UNCD) (ANL-IN-14-019)

    This system was constructed as an alternative for detection of obscured objects and material. Depending on the geometry of the given situation a flat-panel source can be used in tomography, radiography, or tomosynthesis. Furthermore, the unit can be used as a portable electron or X-ray scanner or an integral part of an existing detection system. UNCD field emitters show great field emission output and can be deposited over large areas as the case with carbon nanotube forest” (CNT) cathodes. Furthermore, UNCDs have better mechanical and thermal properties as compared to CNT tips which further extend the lifetime of UNCD based FEA.

    Benefits

    • Prototype based on nitrogen incorporated ultrananocrystalline diamond film 
    • Emission current densities of the order of 6mA/cm2 could be obtained at electric fields as low as 10 V/lm to 20V/lm