Argonne National Laboratory

Research Highlight | Materials Science

Orbital-flop induced magnetoresistance anisotropy
In a study published in Nature Communications, researchers indicated their results showcase a contribution of orbital behavior in the emergence of intriguing phenomena.
Magnetic-field dependent anisotropic magnetoresistance. (left) Polar plot of the angle-dependent resistance of Sample A at T = 3 K in magnetic fields of μ0H = 9T to 2T in intervals of 1T. The data clearly show the minima in the ferromagnetic phase at μ0H ≥ 5T at θ = 45°, 135°, 225° and 315° degrees induced by orbital-flop, in addition to the minima at θ = 0°, 90°, 180° and 270° degrees originating from the Fermi surfaces. (right) Polar plot of the anisotropic magnetoresistances of the same sample at the same temperature in antiferromagnetic phase from μ0H = 4T to 1T (and partial data at 4.5T) in intervals of 0.5T. The data show more complicated features resulting from the competition of orbital-flop, anisotropic Fermi surface and magnetic phase transitions.

Scientific Achievement

Discovery of a new electron orbital contribution to the emergence of intriguing magneto-transport phenomena.

Significance and Impact

This work provides direct evidence of a new type of orbital-induced property in CeSb and its contributions to the phenomenon of extremely large magnetoresistance. It further demonstrates the potential of utilizing orbital-flop transitions in electronic applications via spin-valve-like structures.

Research Details

  • Grew ultra-high quality CeSb single crystals.
  • Measured magnetoresistances in a rotating magnetic field perpendicular to the current.
  • Developed a phenomenological model to account for the anisotropic magnetoresistance.
  • Constructed a spin-valve-like structure to demonstrate the utilization of orbital-flops.

DOI: 10.1038/s41467-019-10624-z

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