Lower: Total TMA + H₂O ALD reaction heat from this work compared with reaction heat predicted from first-principles.
Scientific Achievement
We directly measure atomic layer deposition (ALD) surface reactions through sub-millisecond time resolution of reaction heat. The study reveals a more complex mechanism for the archetypical ALD growth of aluminum oxide, a reaction that has been studied for 30+ years.
Significance and Impact
While most in situ probes measure properties of the film after each surface reaction, we interrogate the reactions in real-time at rates >100x faster than other methods and with sensitivity reaching 1/1000th of an atomic layer.
Research Details
- World-unique capability reveals 3.46 and 2.76 eV/Al heat, greater than the heat predicted by computational models based on crystalline Al2O3.
- Comparison with computational models highlights limitations to our understanding and ultimately control of even the most well-known surface synthesis reactions.
DOI: 10.1021/jacs.2c05460
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