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Giant PiezoResisitivity in Boron Doped Diamond Nanowire (ANL-IN-14-016)

A UNCD nanowire comprises a first end electrically coupled to a first contact pad which is disposed on a substrate.
US Patent 9,441,940
  • Giant PiezoResisitivity in Boron Doped Diamond Nanowire (ANL-IN-14-016)

A UNCD nanowire comprises a first end electrically coupled to a first contact pad which is disposed on a substrate. A second end is electrically coupled to a second contact pad also disposed on the substrate. The UNCD nanowire is doped with a dopant and disposed over the substrate. The UNCD nanowire is movable between a first configuration in which no force is exerted on the UNCD nanowire and a second configuration in which the UNCD nanowire bends about the first end and the second end in response to a force. The UNCD nanowire has a first resistance in the first configuration and a second resistance in the second configuration which is different from the first resistance. The UNCD nanowire is structured to have a gauge factor of at least about 70, for example, in the range of about 70 to about 1,800.

Benefits

  • Increased sensitivity to applied strain for tactile sensing 
  • More environmentally stable than conventional silicon-based piezoresistive sensors