A system and method for forming graphene layers on a substrate
Intellectual Property Available to License
US Patent 8,906,772
- Graphene Layer Formation at Low Substrate Temperature on a Metal and Carbon Based Substrate (ANL-IN-11-055)
The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.
Benefits
- Direct growth of graphene on insulating substrate at wafer-scale
- Order of magnitude increase in breakdown current density reaching up to one thousand times improvement over conventional metal based interconnects