A system and method for forming graphene layers on a substrate
Intellectual Property Available to License
US Patent 8,652,946
- Graphene Layer Formation on a Carbon Based Substrate (ANL-IN-12-024)
The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.
Benefits
- Direct growth of graphene on insulating substrate at wafer-scale
- Order of magnitude increase in breakdown current density reaching up to one thousand times improvement over conventional metal based interconnects