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Method for fabrication of ceramic dielectric films on copper foils (IN-09-006B)

Process to make advanced power electronic devices with high permittivity and low dielectric loss
Intellectual Property Available to License

US Patent 9,679,705 B2
  • Method for fabrication of ceramic dielectric films on copper foils (IN-09-006B)

The present invention provides copper substrate coated with a lead-lanthanum-zirconium-titanium (PLZT) ceramic film, which is prepared by a method comprising applying a layer of a sol-gel composition onto a copper foil. The sol-gel composition comprises a precursor of a ceramic material suspended in 2-methoxyethanol. The layer of sol-gel is then dried at a temperature up to about 250° C. The dried layer is then pyrolyzed at a temperature in the range of about 300 to about 450° C. to form a ceramic film from the ceramic precursor. The ceramic film is then crystallized at a temperature in the range of about 600 to about 750° C. The drying, pyrolyzing and crystallizing are performed under a flowing stream of an inert gas.