Argonne researchers have invented a method for improving tungsten thin film adhesion in Atomic Layer Deposition (ALD).
Intellectual Property Available to License
US patent 20180094352A1
- Methods to Improve the Tungsten Thin Film Adhesion (ANL-IN-16-031)
At present, semiconductor microelectronic logic and memory devices use tungsten thin films as integrated device wirings and contact metallization. Argonne’s novel method improves metal layer adhesion and nucleation, enhancing the metal grain growth and increasing electrical conductivity.