Argonne National Laboratory

Science and Technology Partnerships and Outreach

RF MEMS Capacitive Switches with High Reliability

Argonne licensing opportunity
Intellectual Property Available to License
US Patent 8,963,659 and US Patent 8,525,185 B2
  • RF MEMS Capacitive Switches with High Reliability

The present invention provides for an electrostatic microelectromechanical (MEMS) device comprising a dielectric layer separating a first conductor and a second conductor. The first conductor is moveable towards the second conductor, when a voltage is applied to the MEMS device. The dielectric layer recovers from dielectric charging failure almost immediately upon removal of the voltage from the MEMS device.

Technology: RF MEMS Capacitive Switches with High Reliability (IN-09-053) View patent details.

A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a ​“fast discharge diamond dielectric layer” and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.

Technology: RF-MEMS capacitive switches with high reliability View patent details.