Technology available for licensing: The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material.

Benefits

• The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.
• The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, and
• Thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features.