An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation.
Intellectual Property Available to License
US Patent 8,354,290
- Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches (ANL-IN-09-070)
Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.
Benefits
- A specialized radio frequency (RF) micro-electromechanical system (MEMS) switch that promises enhanced capabilities for next-generation military and commercial communication systems
- Robust and reliable with extremely low power consumption; prevents overcharge and improves safety
- CMOS compatible