A method of preparing a nitrogen containing electrode catalyst by converting a high surface area metal-organic framework (MOF) material free of platinum group metals that includes a transition metal, an organic ligand, and an organic solvent via a high temperature thermal treatment to form catalytic active sites in the MOF. At least a portion of the contained organic solvent may be replaced with a nitrogen containing organic solvent or an organometallic compound or a transition metal salt to enhance catalytic performance. The electrode catalysts may be used in various electrochemical systems, including a proton exchange membrane fuel cell.

A precursor solution of a transition metal based material is formed into a plurality of interconnected nanofibers by electro-spinning the precursor solution with the nanofibers converted to a catalytically active material by a heat treatment. Selected subsequent treatments can enhance catalytic activity.

The catalytic portion includes a plurality of distinct layers of catalytic material, which layers may be deposited through atomic layer deposition techniques. The catalyst may have a selectivity for the conversion of alkanes to alkenes of over 50%. The catalyst may be incorporated in a reactor such as a fluidized bed reactor or a single pass reactor.

A silicon substrate is provided and an optical lithography is used to produce metal dots on the silicon substrate with a predefined spacing between the dots. Selective seeding of the silicon wafer with nanodiamond solution in water is performed followed by controlled lateral diamond film growth producing the nanoporous diamond membrane. Back etching of the under laying silicon is performed to open nanopores in the produced nanoporous diamond membrane.

Benefits

• Biocompatible for skin grafting, as well as for water purification applications 

The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.

Benefits

• Direct growth of graphene on insulating substrate at wafer-scale 
• Order of magnitude increase in breakdown current density reaching up to one thousand times improvement over conventional metal based interconnects 

A second gas at a second flow rate and a third gas at a third flow rate is inserted into the chamber to increase the chamber pressure to a second pressure greater than the first pressure. A chamber temperature is increased to a first temperature. The flow of the second gas and the third gas is stopped. The chamber is purged to a third pressure higher than the first pressure and lower than the second pressure. The pressure of the chamber is set at a fourth pressure greater than the first pressure and the third pressure. A fourth gas is inserted into the chamber at a fourth flow rate for a first time.

Benefits

• Optically transparent, CVD deposition of reduced graphene oxide film directly on the glass substrate 
• Wafer-scale synthesis in few mins 
• Pin-hole free deposition 
• Moderate sheet resistance at lower thickness 
• High thermal conductivity than Tin Oxide 

A two-dimensional thin film transistor and a method for manufacturing a two-dimensional thin film transistor includes layering a semiconducting channel material on a substrate, providing a first electrode material on top of the semiconducting channel material, patterning a source metal electrode and a drain metal electrode at opposite ends of the semiconducting channel material from the first electrode material, opening a window between the source metal electrode and the drain metal electrode, removing the first electrode material from the window located above the semiconducting channel material providing a gate dielectric above the semiconducting channel material, and providing a top gate above the gate dielectric, the top gate formed from a second electrode material. The semiconducting channel material is made of tungsten diselenide, the first electrode material and the second electrode material are made of graphene, and the gate dielectric is made of hexagonal boron nitride.

Benefits

• Flexible, transparent high mobility thin film transistor for flat panel display 
• 10 atomic layers thick 
• On/off ratio is as good as current commercial thin-film transistors 

Transparent coatings find numerous applications in modern devices. For example, transparent coatings can be used for coating windshields, air craft windows, cell phone screens, tablet screens, computer screens, weapon heads, field deployed sensors, lasers, light emitting diodes (LEDs), etc. These coatings need to be transparent, scratch resistant, have high hardness, corrosion resistance, and generally provide protection from the environment.

There is also an increasing demand for transparent semi-conductor devices. For example, traditional solar cells are fabricated on silicon which is opaque. Only one surface of such solar cells is available for receiving light and generating electricity therefrom. There is also a demand for other semi-conductor devices such as p-n junction devices, LEDs, other diodes, transistors, etc. Moreover, high power high temperature semi-conductor devices produce a substantial amount of heat which needs to be dissipated for proper operation of the semi-conductor devices. 

The patents’ details generally discuss methods for fabricating transparent films and devices; and in particular methods for fabricating transparent nanocrystalline diamond (NCD) coatings, and transparent NCD devices.

Benefits

• Optically transparent, scratch resistant ultrathin film of diamond on glass for protective applications

Description

A method for coating a substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The plasma ball has a diameter. The plasma ball is disposed at a first distance from the substrate and the substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the substrate, and a diamond coating is deposited on the substrate. The diamond coating has a thickness. Furthermore, the diamond coating has an optical transparency of greater than about 80%. The diamond coating can include nanocrystalline diamond. The microwave plasma source can have a frequency of about 915 MHz.