Argonne National Laboratory

lithography

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  • Advanced R&D, integration, and commercialization of polymer refractive X-ray optical components
    Intellectual Property Available to License
    US Patent 17/039,624
    • Method of Printing and Implementing Refractive X-Ray Optical Components (ANL-IN-20-070)

    Technology

    Using high-resolution polymerization lithography, this technology enables rapid and cost-efficient printing of refractive X-ray optics, such as phase correctors and compound refractive lenses (CRLs) with a better-than-100 nm printing resolution. These optics have shown a higher quality and better performance than conventional lenses, such as those commercially available Be CRLs. Supported on the small flat substrates, these lenses can be quickly deployed into an X-ray beam delivery system.

    Opportunity & Solution

    To fully utilize DOE’s high coherence of the diffraction-limited X-ray sources, there is an urgent need for a giant leap forward in the manufacturing capabilities of X-ray refractive optics that are required for controllable wavefronts in the applications of coherent-based experiment methods. To meet these goals, Argonne National Laboratory researchers have been developing a customizable strategy to manufacture and deploy polymer-based refractive X-ray optics at synchrotron beamlines.

    Benefits

    • Improve multiple polymerization printing lithography schemes for better lens quality and shape controls.
    • Improve the printing resolution to 20-50 nm.
    • Scale-up the procedure for high-throughput optics fabrication, aiming at a useful lens array set per one to a few hours.
    • Investigate high-energy (>20 kev) and high-coherence applications of printed optics.
    • Design commercialization-ready assembly scheme for stand-alone instrument that allows fast optics alignment and flexible operation to meet various experimental requirements at synchrotron beamlines.
    • Develop a cost-effective transfocator mechanism for rapid lens exchange and replacement.
  • Process for preparing lower-cost, high-throughput multiple patterning photolithography
    Intellectual Property Available to License
    US Patent 9,684,234
    • Sequential Infiltration Synthesis for Enhancing Multiple Patterning Lithography (ANL-IN-12-107 and ANL-IN-12-107B)

    Technology available for licensing: The invention is simplified methods of multiple-patterning photolithography using sequential infiltration synthesis (SIS) to modify the photoresist such that it withstands plasma etching better than unmodified resist and replaces one or more hard masks and/or a freezing step in MPL processes including litho-etch-litho-etch photolithography or litho-freeze-litho-etch photolithography. Potential applications of these methods and system extend to virtually all technologies in which periodic nanomaterial structures are desirable, including optoelectronics, sensors, membranes, photonic crystals, dielectric materials, and electronics.

    Benefits

    • Process for preparing lower-cost, high-throughput multiple patterning photolithography.
    • Can increase the plasma etch resistance and/or render a photoresist layer insoluble in photoresist solvents, thus obviating the need for one or more steps of present techniques of multiple-patterning lithography.
    • Utilizes alternating exposures to gas phase precursors that infiltrate the organic or partially organic resist material to form a protective component within the resist layer, modifying the standard multiple-patterning lithography techniques to reduce the number of steps and/or decrease the cost and time that these techniques presently require