Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.

Benefits

• A specialized radio frequency (RF) micro-electromechanical system (MEMS) switch that promises enhanced capabilities for next-generation military and commercial communication systems 
• Robust and reliable with extremely low power consumption; prevents overcharge and improves safety 
• CMOS compatible 

A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a ​“fast discharge diamond dielectric layer” and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.

Benefits

• A specialized radio frequency (RF) micro-electromechanical system (MEMS) switch that promises enhanced capabilities for next-generation military and commercial communication systems 
• Robust and reliable with extremely low power consumption; prevents overcharge and improves safety 
• CMOS Compatible 

The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.

Benefits

• Direct growth of graphene on insulating substrate at wafer-scale 
• Order of magnitude increase in breakdown current density reaching up to one thousand times improvement over conventional metal based interconnects

The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.

Benefits

• Direct growth of graphene on insulating substrate at wafer-scale 
• Order of magnitude increase in breakdown current density reaching up to one thousand times improvement over conventional metal based interconnects 

The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.

Benefits

• Direct growth of graphene on insulating substrate at wafer-scale 
• Order of magnitude increase in breakdown current density reaching up to one thousand times improvement over conventional metal based interconnects 

The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.

Benefits

• Direct growth of graphene on insulating substrate at wafer-scale 
• Order of magnitude increase in breakdown current density reaching up to one thousand times improvement over conventional metal based interconnects

A second gas at a second flow rate and a third gas at a third flow rate is inserted into the chamber to increase the chamber pressure to a second pressure greater than the first pressure. A chamber temperature is increased to a first temperature. The flow of the second gas and the third gas is stopped. The chamber is purged to a third pressure higher than the first pressure and lower than the second pressure. The pressure of the chamber is set at a fourth pressure greater than the first pressure and the third pressure. A fourth gas is inserted into the chamber at a fourth flow rate for a first time.

Benefits

• Optically transparent, CVD deposition of reduced graphene oxide film directly on the glass substrate 
• Wafer-scale synthesis in few mins 
• Pin-hole free deposition 
• Moderate sheet resistance at lower thickness 
• High thermal conductivity than Tin Oxide 

A two-dimensional thin film transistor and a method for manufacturing a two-dimensional thin film transistor includes layering a semiconducting channel material on a substrate, providing a first electrode material on top of the semiconducting channel material, patterning a source metal electrode and a drain metal electrode at opposite ends of the semiconducting channel material from the first electrode material, opening a window between the source metal electrode and the drain metal electrode, removing the first electrode material from the window located above the semiconducting channel material providing a gate dielectric above the semiconducting channel material, and providing a top gate above the gate dielectric, the top gate formed from a second electrode material. The semiconducting channel material is made of tungsten diselenide, the first electrode material and the second electrode material are made of graphene, and the gate dielectric is made of hexagonal boron nitride.

Benefits

• Flexible, transparent high mobility thin film transistor for flat panel display 
• 10 atomic layers thick 
• On/off ratio is as good as current commercial thin-film transistors 

Transparent coatings find numerous applications in modern devices. For example, transparent coatings can be used for coating windshields, air craft windows, cell phone screens, tablet screens, computer screens, weapon heads, field deployed sensors, lasers, light emitting diodes (LEDs), etc. These coatings need to be transparent, scratch resistant, have high hardness, corrosion resistance, and generally provide protection from the environment.

There is also an increasing demand for transparent semi-conductor devices. For example, traditional solar cells are fabricated on silicon which is opaque. Only one surface of such solar cells is available for receiving light and generating electricity therefrom. There is also a demand for other semi-conductor devices such as p-n junction devices, LEDs, other diodes, transistors, etc. Moreover, high power high temperature semi-conductor devices produce a substantial amount of heat which needs to be dissipated for proper operation of the semi-conductor devices. 

The patents’ details generally discuss methods for fabricating transparent films and devices; and in particular methods for fabricating transparent nanocrystalline diamond (NCD) coatings, and transparent NCD devices.

Benefits

• Optically transparent, scratch resistant ultrathin film of diamond on glass for protective applications

Description

A method for coating a substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The plasma ball has a diameter. The plasma ball is disposed at a first distance from the substrate and the substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the substrate, and a diamond coating is deposited on the substrate. The diamond coating has a thickness. Furthermore, the diamond coating has an optical transparency of greater than about 80%. The diamond coating can include nanocrystalline diamond. The microwave plasma source can have a frequency of about 915 MHz.