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In a study published in Nature Materials, researchers advance the understanding of hot-hole dynamics in metal–semiconductor heterostructures.

Scientific Achievement 

Ultrafast (t < 200 fs) hot-hole injection from gold nanoparticles into the valence band of p-type GaN alters the thermalization dynamics of hot electrons, reducing peak electronic temperature and electron–phonon coupling time of the gold nanoparticles. 

Significance and Impact

Understanding of hot-carrier dynamics in photo-excited metal nanostructures is needed to unlock their potential for photodetection and photocatalysis. These results advance our understanding of hot-hole dynamics in metal–semiconductor heterostructures.

Research Details

  • Center for Nanoscale Materials (CNM) ultrafast transient absorption capabilities were utilized. First-principles calculations reveal hot-hole injection modifies the relaxation dynamics by modulating the electronic structure of the metal.

Work was performed in part at CNM.

DOI10.1038/s41563-020-0737-1

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About Argonne’s Center for Nanoscale Materials
The Center for Nanoscale Materials is one of the five DOE Nanoscale Science Research Centers, premier national user facilities for interdisciplinary research at the nanoscale supported by the DOE Office of Science. Together the NSRCs comprise a suite of complementary facilities that provide researchers with state-of-the-art capabilities to fabricate, process, characterize and model nanoscale materials, and constitute the largest infrastructure investment of the National Nanotechnology Initiative. The NSRCs are located at DOE’s Argonne, Brookhaven, Lawrence Berkeley, Oak Ridge, Sandia and Los Alamos National Laboratories. For more information about the DOE NSRCs, please visit https://​sci​ence​.osti​.gov/​U​s​e​r​-​F​a​c​i​l​i​t​i​e​s​/​U​s​e​r​-​F​a​c​i​l​i​t​i​e​s​-​a​t​-​a​-​G​lance.

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