Argonne along with many companies and research organizations signs pledge to substantially increase energy efficiency of microelectronics over next two decades.
With the availability of advanced microelectronics technology nodes, more digital functionality from the computing domains can be integrated directly into detector silicon to increase data velocity.
We are exploring ultra-thin layered materials grown conformally using atomic layer deposition and etching as metal diffusion barriers for 3D integration in microelectronic devices.
We are developing redox gate and channel materials that can operate beyond the electrostatic doping limitation while the charge carriers are still electrons or holes to achieve printable transistors operating at sub-volt gate voltages.
A remarkable synthesis strategy has emerged allowing the growth of 2D single crystals on graphene that can be “stacked” atop each other to form a new pseudo-3D material.